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Temperature effect in the Casimir attraction of a thin metal film

机译:卡西米尔吸引薄金属膜的温度效应

摘要

The Casimir effect for conductors at arbitrary temperatures is theoreticallystudied. By using the analytical properties of the Green functions and applyingthe Abel-Plan formula to Lifshitz's equation, the Casimir force is presented assum of a temperature dependent and vacuum contributions of the fluctuatingelectromagnetic field. The general results are applied to the system consistingof a bulk conductor and a thin metal film. It is shown that a characteristicfrequency of the thermal fluctuations in this system is proportional to thesquare root of a thickness of the metal film. For the case of the sufficientlyhigh temperatures when the thermal fluctuations play the main role in theCasimir interaction, this leads to the growth of the effective dielectricpermittivity of the film and to a disappearance of the dependence of Casimir'sforce on the sample thickness.
机译:理论上研究了导体在任意温度下的卡西米尔效应。通过使用格林函数的解析性质并将Abel-Plan公式应用于Lifshitz方程,将卡西米尔力表示为温度依赖性和波动电磁场的真空贡献的总和。总体结果适用于由体导体和金属薄膜组成的系统。结果表明,该系统中热涨落的特征频率与金属膜厚度的平方根成正比。对于足够高的温度,当热波动在卡西米尔相互作用中起主要作用时,这会导致膜的有效介电常数增大,并且卡西米尔力对样品厚度的依赖性也会消失。

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  • 年度 2000
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  • 正文语种 {"code":"en","name":"English","id":9}
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